Few-Layer Graphene Oxide (Hummer’s Process) – 3–4 Layer High-Quality GO

Few-layer graphene oxide (GO) synthesized via the Hummer’s process offers excellent dispersibility, functionalization potential, and high surface area. This material consists of 3–4 graphene oxide layers, making it suitable for polymer reinforcement, conductive coatings, energy storage devices, biomedical applications, and environmental research.

The Hummer’s method produces GO sheets with oxygen-containing functional groups (epoxy, hydroxyl, carbonyl), allowing easy chemical modification and improved compatibility with matrices. Its layered structure and controlled number of layers make it ideal for applications requiring both high conductivity and tunable surface chemistry.

Characterization confirms the few-layer structure and high-quality synthesis: Raman spectroscopy shows I2D/IG <1–2, consistent with few-layer graphene, while X-ray diffraction shows clear 2θ peaks at 23.76° (002) and 43.8° (102). These features indicate 3–4 layers of graphene oxide with ordered stacking and good crystallinity.

Characterization:

Uses of Few-Layer Graphene Oxide:
• Polymer and composite reinforcement
• Sensors and flexible electronics
• Energy storage (supercapacitors, batteries)
• Biomedical research and drug delivery
• Coatings and thin films
• Water purification and photocatalysis
• Laboratory and academic research